Semiconductor device and semiconductor substrate, and their manufacturing method

半導体装置および半導体基板ならびにそれらの製造方法

Abstract

(57)【要約】 【課題】 格子欠陥をより低減した半導体装置を提供す る。 【解決手段】 基板法線方向から見て閉じた形状の窪み 104が表面に設けられた基板102と、少なくとも窪 み104の内面(105、106、107)からの結晶 成長によって基板102の表面上に形成された半導体層 103とを備えた半導体装置である。
PROBLEM TO BE SOLVED: To provide a semiconductor device which has further reduced defects. SOLUTION: This semiconductor device is equipped with a substrate 102 which has on its surface a hollow in a closed shape, when viewed from a substrate normal direction, and a semiconductor layer 103 formed on the surface of the substrate 102 by crystal growth at least from internal surface (105, 106, and 107) of a hollow 104. COPYRIGHT: (C)2001,JPO

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Cited By (4)

    Publication numberPublication dateAssigneeTitle
    JP-2003318441-ANovember 07, 2003Nichia Chem Ind Ltd, 日亜化学工業株式会社Semiconductor light emitting element
    JP-2006332714-ADecember 07, 2006Nichia Chem Ind Ltd, 日亜化学工業株式会社半導体発光素子
    US-9368681-B2June 14, 2016Nichia CorporationSemiconductor light emitting device
    US-9865773-B2January 09, 2018Nichia CorporationSemiconductor light emitting device