Semiconductor device and semiconductor substrate, and their manufacturing method



(57)【要約】 【課題】 格子欠陥をより低減した半導体装置を提供す る。 【解決手段】 基板法線方向から見て閉じた形状の窪み 104が表面に設けられた基板102と、少なくとも窪 み104の内面(105、106、107)からの結晶 成長によって基板102の表面上に形成された半導体層 103とを備えた半導体装置である。
PROBLEM TO BE SOLVED: To provide a semiconductor device which has further reduced defects. SOLUTION: This semiconductor device is equipped with a substrate 102 which has on its surface a hollow in a closed shape, when viewed from a substrate normal direction, and a semiconductor layer 103 formed on the surface of the substrate 102 by crystal growth at least from internal surface (105, 106, and 107) of a hollow 104. COPYRIGHT: (C)2001,JPO




Download Full PDF Version (Non-Commercial Use)

Patent Citations (6)

    Publication numberPublication dateAssigneeTitle
    JP-2000106455-AApril 11, 2000Sharp Corp, シャープ株式会社Nitride semiconductor structure, fabrication thereof and light emitting element
    JP-2000124500-AApril 28, 2000Toshiba Corp, 株式会社東芝窒化ガリウム系半導体装置
    JP-2000353821-ADecember 19, 2000Pioneer Electronic Corp, パイオニア株式会社Nitride semiconductor device and manufacture thereof
    JP-2001160539-AJune 12, 2001Sanyo Electric Co Ltd, 三洋電機株式会社窒化物系半導体素子および窒化物系半導体の形成方法
    JP-H08195530-AJuly 30, 1996Hitachi Ltd, 株式会社日立製作所Semiconductor laser device
    JP-H11145516-AMay 28, 1999Toyoda Gosei Co Ltd, 豊田合成株式会社窒化ガリウム系化合物半導体の製造方法

NO-Patent Citations (0)


Cited By (4)

    Publication numberPublication dateAssigneeTitle
    JP-2003318441-ANovember 07, 2003Nichia Chem Ind Ltd, 日亜化学工業株式会社Semiconductor light emitting element
    JP-2006332714-ADecember 07, 2006Nichia Chem Ind Ltd, 日亜化学工業株式会社半導体発光素子
    US-9368681-B2June 14, 2016Nichia CorporationSemiconductor light emitting device
    US-9865773-B2January 09, 2018Nichia CorporationSemiconductor light emitting device