発光素子及びその製造方法

Light-emitting device and method of manufacturing the same

Abstract

【課題】発光駆動用の電極としてITO電極層を使用するとともに、一辺の寸法を400μm以上とした大形面発光素子への適用を前提として、素子面積に見合った均一で高い発光強度を実現できる発光素子を提供する。 【解決手段】発光素子100は、化合物半導体よりなる発光層部24の少なくとも一方の主表面が、光取出面側電極であるITO電極層20により覆われている。 発光層部24の主表面の、正方形換算における一辺Lの寸法は400μm以上であり、かつ、ITO電極層20の厚さtが400nm以上とされる。 【選択図】 図1
<P>PROBLEM TO BE SOLVED: To provide a light-emitting device which uses an ITO electrode layer as an electrode for light emission drive and achieves a uniform and high radiation intensity according to an area of the device on the assumption that the device is applied to a light-emitting device with a large surface of 400 μm or larger. <P>SOLUTION: In a light-emitting device 100, at least one of the major surfaces of a light-emitting layer 24, which is composed of a compound semiconductor, is covered with an ITO electrode layer 20 serving as a light extracting surface electrode. When the major surface of the light-emitting layer 24 is converted into a square, a side L is 400 μm or longer. Further, a thickness t of the ITO electrode 20 is 400 nm or larger. <P>COPYRIGHT: (C)2004,JPO

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Patent Citations (6)

    Publication numberPublication dateAssigneeTitle
    JP-2001148511-AMay 29, 2001Showa Denko Kk, 昭和電工株式会社Semiconductor light-emitting diode
    JP-2001237461-AAugust 31, 2001Toshiba Corp, 株式会社東芝Semiconductor light-emitting element
    JP-2002043621-AFebruary 08, 2002Showa Denko Kk, 昭和電工株式会社発光ダイオード、ランプおよびその製造方法
    JP-2002232005-AAugust 16, 2002Nanoteco Corp, Shin Etsu Handotai Co Ltd, 信越半導体株式会社, 株式会社ナノテコLight emitting element
    JP-2003174197-AJune 20, 2003Nanoteco Corp, Shin Etsu Handotai Co Ltd, 信越半導体株式会社, 株式会社ナノテコLight emitting element and method of manufacturing the same
    JP-H06188455-AJuly 08, 1994Daido Steel Co Ltd, 大同特殊鋼株式会社Ito film formation method for semiconductor photoelectric element

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