Semiconductor substrate or manufacturing method therefor

半導体基板または半導体装置の製造方法

Abstract

【課題】平面形状の面積が大きい平板状空洞を備えた半導体基板または半導体装置の製造方法を提供することにある。 【解決手段】半導体基板1の表面にホール4を複数形成する。この後、減圧下において非酸化性雰囲気のアニール処理を行う。アニール処理により、半導体基板1の表面を半導体の表面マイグレーションを利用して平坦化し、基板内部に平板状空洞6を形成する。このアニール処理の際に、ホール4の開口部が閉じた後に減圧下の状態のまま半導体のソースガスを供給する。 【選択図】図1
PROBLEM TO BE SOLVED: To provide a semiconductor substrate including a planar cavity having large area in a planar shape, or a manufacturing method therefor.SOLUTION: A plurality of holes 4 are formed on the surface of a semiconductor substrate 1. Subsequently, annealing in the non-oxidizing atmosphere is performed under reduced pressure. During the annealing, the surface of the semiconductor substrate 1 is flattened by utilizing surface migration of a semiconductor, and a planar cavity 6 is formed in the substrate. After the opening of the hole 4 is closed in the annealing, source gas of semiconductor is supplied under the state of reduced pressure still.

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